微纳电子材料包括的范围非常广泛，基于该领域发展趋势与复旦大学研究基础两方面的考虑，将研究范围集中此方向：
低维半导体人工结构
基于分子束外延技术的锗硅超晶格、子阱及子点等不同维度的半导体人工结构材料的制备，重点研究如何利用自组织方式，生长出尺寸与密度都能控制的锗硅子点、岛及子环，探索利用表面活化剂来控制表面应变场，从而得到子点的空间有序排列和多层子点结构；对低维半导体材料的子限制效应等物理现象进行观察与研究，利用低温和强磁场下显微、超快等多维度光谱，研究单个或少数 
Micro-nano electronic materials cover a wide range. Based on thedevelopment trend of this field and the research basis of FudanUniversity, the research scope is focused on this direction:
Low-dimensional semiconductor artificial structure
Based on molecular beam epitaxy technology, the preparation ofsilicon germanium superlattice, wells, dots andother semiconductor artificial structural materials with differentdimensions focuses on how to use self-organization to grow silicongermanium dots, islands and rings withcontrollable size and density, and explore the use of surfaceactivator to control the surface strain field, so as to obtain thespatial ordered arrangement of dots and multi-layer dot structure; Observe and study the confinement effect andother physical phenomena of low-dimensional semiconductormaterials, and study single or few